Scientists have demonstrated hyperthermal ion implantation (HyTII) as an effective means of substitutionally doping graphene, resulting in a low-defect film with a tunable bandstructure amenable to a variety of device platforms and applications.
Scientists have demonstrated hyperthermal ion implantation (HyTII) as an effective means of substitutionally doping graphene, resulting in a low-defect film with a tunable bandstructure amenable to a variety of device platforms and applications.